In short, the storage capacity we need is growing rapidly.

One possibility is the racetrack memory device where the data is stored in nanowires in the form of oppositely magnetized areas, so-called domains.

The results of this research have recently been published in the scientific journal Nature Materials.

A research team from Johannes Gutenberg University Mainz (JGU) in Germany, together with colleagues from Eindhoven University of Technology in the Netherlands as well as Daegu Gyeongbuk Institute of Science and Technology and Sogang University in South Korea, has now made a discovery that could significantly improve these racetrack memory devices.

"We were able to demonstrate a hitherto undiscovered interaction," explained Dr. Kyujoon Lee of Mainz University.

"It occurs between two thin magnetic layers separated by a non-magnetic layer."

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