The Nintendo Switch is a brilliant hybrid console, and this is largely in thanks to its ability to be used either as a handheld system or a traditional system.
Connecting it to a television requires a dock, and Nintendo’s own design is unwieldy and bulky.
The Genki Covert Dock aims to eliminate this issue by combining the dock’s functionality with a charger in a tiny single device.
Just launched on Kickstarter — the campaign destroyed its original $50,000 goal in less than one hour — the Genki Covert Dock is created by Human Things, and it includes an HDMI port, foldable prongs, and USB 3.1 and USB-C ports for charging and accessories.
The Nintendo Switch is not placed directly on the device, but rather connects with a USB-C cable, and an HDMI cable goes from the Genki Covert Dock to the television.
Its internals are powered by Gallium Nitride, which the creators said will reduce heat, and it can also charge everything from iPhones to Microsoft Surface tablets.
After releasing a simple dongle that finally let the Nintendo Switch connect to wireless headphones, Human Things is back with another product that vastly improves the console’s portability.
The Genki Covert Dock replaces the Switch’s charger and TV dock with a streamlined wall adapter that does everything.
Soon after the Switch was released it was discovered that its bulky dock, which allowed the console to be connected to a TV, couldn’t be replaced with one of the existing USB-C to HDMI cable adapters already available for phones and tablets.
It didn’t take long for third-party accessory makers to figure out how to replicate what the Switch’s TV dock was doing, and releasing much smaller solutions, but none of them promise as much functionality as Human Things new Genki Covert Dock in such a compact package.
The adapter looks no bigger than the USB-C wall wart Nintendo includes for charging the Switch, but it adds an extra USB 3.1 port for charging other devices like a smartphone, and an HDMI port for connecting the Switch to a TV while its battery is being replenished.
You’ll need to remember to bring the requisite cables, but the Genki Covert Dock, which uses Gallium Nitride instead of silicon so there’s more room inside for additional electronics, should take up considerably less room in your daypack or carry-on.
RF GaN Semiconductor Device Market SizeA well-known Market research forum—the Market Research Future has come up with its latest reports on global RF GaN Semiconductor Device Market saying that it is estimated that the market is ready to reach USD 1,607.23 Million by 2025 while growing at a CAGR of 20.3% in the forecast period of 2019–2025.What is RF GaN Semiconductor Device?Over the last decade, Gallium Nitride (GaN) has flaunted the technology as the future for high power cellular base stations that will displace silicon LDMOS devices.About GaN—Gallium nitride—GaN is a material that is generally used in the production of semiconductor power devices as well as RF components and light-emitting diodes (LEDs).
GaN has labeled with the capability to become the displacement technology for silicon semiconductors, mainly in power conversion, RF, and analog applications.Seeing as the dawn of the electronics age since a hundred years ago, power design engineers have been on an expedition for the ideal switch that will rapidly and efficiently convert raw electrical energy into a controlled and useful flow of electrons.GaN ascension to the forefront of the RF semiconductor industry comes at a crucial moment in the evolution of commercial wireless infrastructure.
It is proven performance leadership over LDMOS technology that is driving its adoption within the newest generation of 4G LTE base stations.Looking further, GaN-based RF technologies also have the potential to succeed in the antiquated magnetron and spark plug technologies to release the full value of commercial solid-state RF energy.GaN Success or AdvantagesIt takes a suitably matched and configured driver to make sure that the switching device—GaN operates to its full qualifications and does not have unplanned issues.
More commonly, the role of this driver in the device is to be the electrical line among the lower-voltage digital output of the microprocessor-based controller or the same circuitry and the higher-voltage with high current, slew-rate demands of the power-switching device.With this, there is much more to the role of RF GaN device than this.
The need for the current high enough rate to swiftly charge the input capacitance of the device and to turn it on, yet it must quickly and crisply pull that charge from the gate input without ringing or overshoot.At most, the factors define the top-tier concerns of GaN devices and its advantages—The maximum gate voltage allowable is the gate threshold voltage and the body diode voltage drop.
The gate-source voltage for an improved GaN device is 6V, and this simplifies the challenge of generating the needed turn-on and turn-off voltages and electric.
