RF GaN Semiconductor Device Market
The sudden challenges created by the ongoing COVID-19 are captured effectively to exhibit the long term growth projections in the MRFR report on RF GaN Semiconductor Device Market. The growth sectors of the RF GaN Semiconductor Device Market are identified with precision for a better growth perspective.
According to Market Research Future, the global RF GaN semiconductor device market has been segmented based on material, application, end user, and region.
The demand for RF amplifiers with a high rate of data transmission, higher frequency, and power has led to the development of GaN RF device technology. Factors contributing to the growth of the global RF GaN market are increasing adoption of RF GaN power devices for energy & power applications and rise in demand for IT & telecommunication equipment that use RF GaN power devices
In March 2018, Cree, Inc. announced the acquisition of Infineon Technologies’ AG radio frequency (rf) power business for approximately € 345 million. The transaction would expand the Cree Wolfspeed business unit’s wireless market and also strengthen Wolfspeed’s leadership in RF GaN-on-SiC technology, as well as provides access to additional markets, customers, and packaging expertise.
The global RF GaN semiconductor device market has been segmented based on sensor type, application, and region.
Based on material type, the market has been segmented into GaN-On-SiC, GaN-On-Silicon, and GaN-On-Diamond. The GaN-on-SiC segment holds the largest market share; it is expected to register the highest CAGR during the forecast period due to various benefits offered by it including high thermal conductivity, performance, reliability, and cut-off frequency which increases its adoption across different industry verticals.
Based on applications the market has been segmented into wireless infrastructure, power storage, satellite communication, PV inverter, others. The wireless segment led the market in 2018 due to the increasing requirement of devices with low power consumption and increasing overall efficiency in performance.
Based on end user, the market has been segmented into aerospace & defense, IT & telecom, consumer electronics, automotive, and others. The aerospace & defense segment is the most significant contributor to the market due to increasing investments by the military and defense industries. RF GaN power devices are used in military and defense industry due to its reduced size and weight. Additionally, its ability to enhance the overall efficiency of the systems and reduce power consumption are some of the factors contributing to the growth of the market
Key Players
The prominent players in the RF GaN semiconductor device market are Sumitomo Electric Industries, Ltd. (Japan), Raytheon Company (US), Robert Bosch GmbH (Germany), STMicroelectronics (France), Hitachi, Ltd (Japan), Toshiba Corporation (Japan), Mitsubishi Electric Corporation (Japan), Infineon Technologies AG (Germany), Renesas Electronics Corporation (Japan), Panasonic Corporation (Japan), Microchip Technology (US), Aethercomm Inc.(US), Cree, Inc. (US), NXP Semiconductor (Netherlands), Analog Devices Inc.(US), ROHM Semiconductors (Japan), Qorvo Inc. (US)
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RF GaN Semiconductor Device MarketMarket Research Future (MRFR), asserts in its recently published research report, that the Global RF GaN (Gallium Nitride) arket is projected to grow at 21.6% CAGR, witnessing considerable growth over the review period.
The market was assessed at USD 415.3 million in 2017 and is touted to reach USD 1295.5 million by 2023.Drivers and RestraintsThe past decade has exhibited significant growth in the RF GaN market, which has reshaped the RF power devices landscape.
moreover, innovation in linearization and power efficiency of RF power amplifiers will create opportunities for major market players during the forecast period.
Based on the application, the RF GaN market has been segmented into aerospace, IT and telecommunication, and military and defense.GaN Success or AdvantagesIt takes a suitably matched and configured driver to make sure that the switching device—GaN operates to its full qualifications and does not have unplanned issues.
More commonly, the role of this driver in the device is to be the electrical line among the lower-voltage digital output of the microprocessor-based controller or the same circuitry and the higher-voltage with high current, slew-rate demands of the power-switching device.With this, there is much more to the role of RF GaN device than this.
The need for the current high enough rate to swiftly charge the input capacitance of the device and to turn it on, yet it must quickly and crisply pull that charge from the gate input without ringing or overshoot.At most, the factors define the top-tier concerns of GaN devices and its advantages—The maximum gate voltage allowable is the gate threshold voltage and the body diode voltage drop.
Gallium Nitride Semiconductor Device Market A new market study, titled “Gallium Nitride Semiconductor Device Market ” has been featured on Market Research Future.Market Research Future (MRFR), studied the impact of COVID crisis on the global RF GaN Semiconductor Device Market 2020 for the assessment period.
As per MRFR study, the RF GaN semiconductor market is likely to touch USD 1,607.23 Mn on the conclusion of the forecast period 2019–2025.
The RF GaN semiconductor market is likely to thrive at 20.3% CAGR across the assessment period.
The role of RF GaN semiconductor device in the wireless infrastructure for the development of cell phones, space and satellite communications, television broadcasting, radio, radar, MRI machines, and military communications can boost the expansion of the RF GaN market across the study period.
In addition, the increase need for RF GaN devices in the production of IT & telecommunication equipment can driver for the expansion of the market across the globe in the forecast period.
More Information@ https://www.marketresearchfuture.com/reports/rf-gan-semiconductor-device-market-8664In addition, companies invested in development of innovations that offers various applications can support the expansion of the market across the review period.
