Gallium Nitride Semiconductor Devices Market 2021 Industry Key Players, Share, Trend, Segmentation and Forecast to 2027

Gallium Nitride Semiconductor Device MarketGallium Nitride (GaN) is known for its usage in the LED diodes and is a third band gap semiconductor.

The compound is formed of Wurtzite crystalline structure and is very tough in nature and its features make it the perfect alternative for pure silicon.

Market Research Future (MRFR) has studied the gallium nitride semiconductor devices market well to predict an 8% CAGR during the forecast period (2017–2023).

Its features like high operating temperature, high-speed switching capacity, high current density, low resistance, and a high dielectric strength are providing the market enough momentum.Segmentation:MRFR’s take on the gallium nitride (GaN) semiconductor devices market segments the report by type, wafer size, devices and end-user.

Such a segmentation is needed for an in-depth analysis of trends.By type, the gallium nitride semiconductor devices market can be segmented into Opto semiconductor, power semiconductor and RF semiconductors.Based on the wafer size, the gallium nitride semiconductor market includes 2 inches, 4 inches and 6 inches and above.Based on the device, the gallium nitride semiconductor market comprises lighting & laser, transistor, diode, rectifier, power ICs, amplifiers, power drivers, supply& inverter, and switching systems.Based on the end-users, the gallium nitride semiconductor devices market consists automotive, aerospace & defense, consumer electronics, telecommunication, and medical.

The aerospace & defense segment has substantial lead as its use in maintaining electronic devices are profound.GaN Success or AdvantagesIt takes a suitably matched and configured driver to make sure that the switching device — GaN operates to its full qualifications and does not have unplanned issues.

The gallium nitride semiconductor device market is expected to reach USD 22.47 Billion by 2023 at a CAGR of 4.6% during the forecast period.Increasing adoption of GaN RF semiconductor devices in military, defense, and aerospace applicationsIncreased use of RF power in military, defense, and aerospace applications acts as a driver for the growth of the gallium nitride semiconductor device market.

The use of RF power devices in avionics and radar systems is fueling the demand for GaN RF semiconductor devices in military, defense, and aerospace applications across the globe.

In March 2015, M/A-COM Technology Solutions Inc. launched a 650 W GaN on silicon carbide high-electron-mobility-transistor (HEMT) for L-band pulsed avionics applications.

In May 2015, Qorvo, Inc. launched a series of GaN power amplifiers with improved efficiency, gain, and power performance for military satellite and commercial VSAT applications.

In September 2015, the company launched 3 new highly reliable and compact GaN RF transistors in plastic packages for use in civilian marine, airborne, and infrastructure radar systems.

Download PDF Brochure:https://www.marketsandmarkets.com/pdfdownloadNew.asp?id=698 Growing competition from SiC in high-voltage semiconductor applicationsSilicon carbide (Sic) power semiconductor devices, since their launch at the commercial level in 2001, have been trying to penetrate the power semiconductor device market globally by replacing pure silicon.

The gallium nitride semiconductor device market is expected to reach USD 22.47 Billion by 2023at a CAGR of 4.6% during the forecast period.

The major factors that are expected to be driving the market are the vast addressable market for gallium nitride in consumer electronics and automotive, wide bandgap property of gallium nitride material encouraging innovative applications, success of gallium nitride in RF power electronics, and increasing adoption of gallium nitride RF semiconductor device in military, defense, and aerospace application.

The use of RF power devices in avionics and radar systems is fueling the demand for GaN RF semiconductor devices in military, defense, and aerospace applications across the globe.

In March 2015, M/A-COM Technology Solutions Inc. launched a 650 W GaN on silicon carbide high-electron-mobility-transistor (HEMT) for L-band pulsed avionics applications.

In September 2015, the company launched 3 new highly reliable and compact GaN RF transistors in plastic packages for use in civilian marine, airborne, and infrastructure radar systems.

Request Free Sample Pages:https://www.marketsandmarkets.com/requestsampleNew.asp?id=698 The key players in this industry are Cree (US), Samsung (South Korea), Infineon (Germany), Qorvo (US), MACOM (US), Microsemi Corporation (US), Analog Devices (US), Mitsubishi Electric (Japan), Efficient Power Conversion (US), GaN Systems (Canada), Exagan (France) , VisIC Technologies (Israel), Integra Technologies (US), Transphorm (US), Navitas Semiconductor (US), Nichia (Japan), Panasonic (Japan), Texas Instruments (US), Ampleon (Netherlands), Sumitomo Electric (Japan), Northrop Grumman Corporation (US), Dialog Semiconductor (UK), and Epistar (Taiwan).

UpMarketResearch offers a latest published report on “Global Gallium Nitride Semiconductor Device Market Analysis and Forecast 2018-2025” delivering key insights and providing a competitive advantage to clients through a detailed report.

The report contains 115 pages which highly exhibit on current market analysis scenario, upcoming as well as future opportunities, revenue growth, pricing and profitability.Gallium Nitride Semiconductor Device Industry research report delivers a close watch on leading competitors with strategic analysis, micro and macro market trend and scenarios, pricing analysis and a holistic overview of the market situations in the forecast period.

Further, key players, major collaborations, merger & acquisitions along with trending innovation and business policies are reviewed in the report.

The report contains basic, secondary and advanced information pertaining to the Gallium Nitride Semiconductor Device Industry global status and trend, market size, share, growth, trends analysis, segment and forecasts from 2018 – 2025.Get Exclusive FREE PDF Sample Copy of This Report @ https://www.upmarketresearch.com/home/requested_sample/6629The scope of the report extends from market scenarios to comparative pricing between major players, cost and profit of the specified market regions.

The numerical data is backed up by statistical tools such as SWOT analysis, BCG matrix, SCOT analysis, PESTLE analysis and so on.

The statistics are represented in graphical format for a clear understanding on facts and figures.The generated report is firmly based on primary research, interviews with top executives, news sources and information insiders.

RF GaN Semiconductor Device Market SizeA well-known Market research forum—the Market Research Future has come up with its latest reports on global RF GaN Semiconductor Device Market saying that it is estimated that the market is ready to reach USD 1,607.23 Million by 2025 while growing at a CAGR of 20.3% in the forecast period of 2019–2025.What is RF GaN Semiconductor Device?Over the last decade, Gallium Nitride (GaN) has flaunted the technology as the future for high power cellular base stations that will displace silicon LDMOS devices.About GaN—Gallium nitride—GaN is a material that is generally used in the production of semiconductor power devices as well as RF components and light-emitting diodes (LEDs).

GaN has labeled with the capability to become the displacement technology for silicon semiconductors, mainly in power conversion, RF, and analog applications.Seeing as the dawn of the electronics age since a hundred years ago, power design engineers have been on an expedition for the ideal switch that will rapidly and efficiently convert raw electrical energy into a controlled and useful flow of electrons.GaN ascension to the forefront of the RF semiconductor industry comes at a crucial moment in the evolution of commercial wireless infrastructure.

It is proven performance leadership over LDMOS technology that is driving its adoption within the newest generation of 4G LTE base stations.Looking further, GaN-based RF technologies also have the potential to succeed in the antiquated magnetron and spark plug technologies to release the full value of commercial solid-state RF energy.GaN Success or AdvantagesIt takes a suitably matched and configured driver to make sure that the switching device—GaN operates to its full qualifications and does not have unplanned issues.

More commonly, the role of this driver in the device is to be the electrical line among the lower-voltage digital output of the microprocessor-based controller or the same circuitry and the higher-voltage with high current, slew-rate demands of the power-switching device.With this, there is much more to the role of RF GaN device than this.

The need for the current high enough rate to swiftly charge the input capacitance of the device and to turn it on, yet it must quickly and crisply pull that charge from the gate input without ringing or overshoot.At most, the factors define the top-tier concerns of GaN devices and its advantages—The maximum gate voltage allowable is the gate threshold voltage and the body diode voltage drop.

The gate-source voltage for an improved GaN device is 6V, and this simplifies the challenge of generating the needed turn-on and turn-off voltages and electric.