Absolute Markets Insights has added a comprehensive analysis titled Insulated-Gate Bipolar Transistor (IGBT) market to its massive repository. The report is structured in a way to provide effective exploratory techniques such as quantitative and quantitative analysis, used to obtain appropriate data of the desired market. Useful graphical presentation techniques such as tables, charts, graphs, and pictures also make the report analysis more lucid to readers. This research study estimates for global Insulated-Gate Bipolar Transistor (IGBT) market till 2030 year. The study is inclusive of a thorough assessment of global Insulated-Gate Bipolar Transistor (IGBT) sector by providing an in-depth analysis of various aspects of the businesses such as recent trends, current growth factors, and industry validated market data. This extensive report also focuses on the advancements of technological platform, tools, and methodologies which help to provide proper guidelines to the businesses. Furthermore, the study also delivers a detailed description of effective sales strategies which help to discover global clients rapidly.
In terms of revenue, global insulated gate bipolar transistor (IGBT) market was valued at US$ 5280.24 Mn in 2020 growing at a CAGR of 9.1% over the forecast period (2021 – 2030).
Insulated-gate Bipolar Transistor (IGBT) is a power transistor with an input MOS and an output bipolar transistor. IGBT power modules (inverters) are required to convert energy from one form to another so that it may be used conveniently and safely. The semiconductor device has applications across myriad product categories in different industries including air conditioners, refrigerators, medical equipment, industrial motors, and electric cars, amongst others. AMI anticipates the market will grow at 9.1% owing to increased demand for electric vehicles and high voltage operating devices in energy and power, automotive, and consumer electronics amongst other industries.
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The major key pillars for global Insulated-Gate Bipolar Transistor (IGBT) market are listed below: Analog Devices, Inc., Darrah Electric Company, Diodes Incorporated, Fuji Electric Co., Ltd., Hitachi Energy Ltd., Infineon Technologies AG, IXYS Corporation, Mitsubishi Electric Corporation, Powerex, ROHM CO., LTD., SEMIKRON, Texas Instruments Incorporated, TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION, and WeEn Semiconductors amongst other market participants.
Insulated-Gate Bipolar Transistor (IGBT) Market Segmentation:
By Type
- Discrete IGBT
- Modular IGBT
By Voltage
- Low Voltage
- Medium Voltage
- High Voltage
By End Use
- Home Appliances
- Air Conditioners
- Washing Machine
- Cooking Equipment
- Refrigerators
- Others
- Medical Equipment
- Automotive (Electric Vehicle / HEV)
- Renewable Power
- Industrial Motors
- Unregulated Power Supply (UPS)
- Switch Mode Power Supplies (SMPS)
- Inverters
- Railways
- Others
By Distribution Channel
- Direct
- Indirect
By Region
- North America
- Europe
- Asia Pacific
- Middle East and Africa
- Latin America
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A research report on the Global Insulated-Gate Bipolar Transistor (IGBT) Market 2020 Industry Research Report.
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