Market Highlights
Rapid development in electronics and semiconductor sectors has increased the need for transistors and integrated circuits (IC) in GaN semiconductor devices. Additionally, the GaN possess the characteristics such as low resistance which reduces the conductance dissipation, minimizes the switching losses, low power to drive the circuits and reduced size at printed circuit boards (PCB) which adds to the market of GaN semiconductor devices. Additionally, GaN provides greater stability in radioactive environment and exhibits a unique ability to control and produce electrons more than 1000 times of silicon (Si) is expected to be major advantages for the GaN semiconductor devices market size to grow over the forecast period.
Moreover, the GaN semiconductor device are bifurcated into type, wafer size, devices, and end user. By type, gallium nitride semiconductor devices is divided into opto semiconductor, power semiconductor, and RF semiconductors. Based on wafer size the gallium nitride semiconductor is further sub categorized into 2 inches, 4 inches, and 6 inches and above. Furthermore, device based gallium nitride semiconductor is subdivided into transistor, diode, rectifier, power ICs, power drivers, supply & inverter, amplifiers, lighting & laser, and switching systems. Lastly, the gallium nitride semiconductor devices are sub segmented into end user which include automotive, aerospace & defense, consumer electronics, telecommunication, and medical
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Regional Analysis
Geographically, the gallium nitride (GaN) semiconductor devices are categorized into four different regions such as North America, Asia Pacific, Europe, and Rest of the World.
North America is expected to be a prominent region in the GaN semiconductor devices market over forecast period. The U.S. and Canada are the leading countries in this region. This is attributed to large investment by the companies for innovation in semiconductor activities. Additionally, advancement of semiconductor power applications and enlarging the market base of GaN semiconductor are anticipated to drive the GaN semiconductor devices market over the review period 2017-2022.
Asia Pacific is expected to be the fastest growing region owing to, surging need for highly efficient RF components in consumer electronics and military applications. However, rapid increase in a large number of electronic component manufacturer are expected to propel the GaN semiconductor devices market over the review period 2017-2022.
Key Players
The key players of GaN Semiconductor Devices Market includes Fujitsu Ltd (Japan), Panasonic Semiconductors (Japan), Texas Instruments (U.S.),RF Micro Devices Corporation (U.S.), Osram Opto-semiconductors (Germany), Cree Incorporated (U.S.), Toshiba (Japan), Aixtron SE (Germany), Infineon Technologies (Germany), Gallia Semiconductor (Belgium), ROHM Company Limited (Japan), . NXP Semiconductors (U.S.), Koninklijke Philips N.V. (Netherlands), Nichia Corporation (Japan), and Qorvo (U.S.).
GaN Semiconductor Device Market - Segmentation
- Segmentation by type: Opto-semiconductor, power semiconductor.
- Segmentation by device: transistor, diode, rectifier, power IC’s, amplifier and switching system.
- Segmentation by application: Consumer Electronics, Automotive, Aerospace and Defence, Telecommunication, medical, power conditioner
- Segmentation by Region: North America, Europe, Asia Pacific, rest of the world.
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TABLE OF CONTENTS
1 Executive Summary
2 Scope Of The Report
2.1 Market Definition
2.2 Scope Of The Study
2.2.1 Research Objectives
2.2.2 Assumptions & Limitations
2.3 Markets Structure
3 Market Research Methodology
3.1 Research Process
3.2 Secondary Research
3.3 Primary Research
3.4 Forecast Model
4 Market Landscape
4.1 Porter’s Five Forces Analysis
4.1.1 Threat Of New Entrants
4.1.2 Bargaining Power Of Buyers
4.1.3 Threat Of Substitutes
4.1.4 Segment Rivalry
4.2 Value Chain/Supply Chain Of Global Gallium Nitride (GaN) Semiconductor Devices Market
5 Industry Overview Of Global Gallium Nitride (GaN) Semiconductor Devices Market
5.1 Introduction
5.2 Growth Drivers
5.3 Impact Analysis
5.4 Market Challenges
6 Market Trends
6.1 Introduction
6.2 Growth Trends
6.3 Impact Analysis
Continued…
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Market Research Future (MRFR) is a global market research firm that takes great pleasure in its services, providing a detailed and reliable study of diverse industries and consumers worldwide. MRFR's methodology integrates proprietary information with different data sources to provide the client with a comprehensive understanding of the current key trends, upcoming events, and the steps to be taken based on those aspects.
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Additionally, GaN is the emerging substitute to pure silicon in the semiconductor sector.
The properties of GaN are intense power efficient compound which is capable of working with high frequency and has the ability to emit high brightness and intensity when used in opto-semiconductor.Gallium nitride semiconductor has more advantages over silicon technology in terms of temperature and power handling capacity.
Gallium nitride has unique properties such as high-speed switching capacity, low resistance, high current density, high operating temperature, and a high dielectric strength.
Gallium nitride semiconductor devices are extensively used in different industrial sectors such as automotive, telecommunications, consumer electronics, and medical sectors.GaN semiconductor is presumed to have a greater demand in power electronics sector attributed to its exceptional ability to control electrons more than 1000 times that of silicon and is manufactured at low cost.However, increase in demand for wireless devices, the rapid evolution of automated devices and low-cost manufacturing is expected to drive the gallium semiconductor market over the forecast period.
On the other hand, the dust produced while manufacturing of GaN semiconductor creates serious concern to human health such as irritation to human eyes, skin and lungs which eventually increases the shielding outfit expenses used for manufacturing purposes which are expected to hinder the growth of GaN semiconductor market over the forecast period.Additionally, silicon carbide (SiC) based semiconductor is expected to be an extensive competition for GaN semiconductor over the forecast period between 2017- 2022.Key Players The key players of GaN semiconductor devices Market includes Fujitsu Ltd (Japan), Panasonic Semiconductors (Japan), Texas Instruments (U.S.),RF Micro Devices Corporation (U.S.), Osram Opto-semiconductors (Germany), Cree Incorporated (U.S.), Toshiba (Japan), Aixtron SE (Germany), Infineon Technologies (Germany), Gallia Semiconductor (Belgium), ROHM Company Limited (Japan), .
Lastly, the gallium nitride semiconductor devices are sub-segmented into end user which include automotive, aerospace & defense, consumer electronics, telecommunication, and medical.Regional AnalysisGeographically, the gallium nitride (GaN) semiconductor devices are segmented into five different regions namely North America, Asia Pacific, Europe, the Middle East & Africa, and Latin America.North America is presumed to be a prominent region in gallium nitride semiconductor devices market.
