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GaN Epitaxial Wafers: The Foundation For Advanced Electronic Devices

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sachin sadgir
GaN Epitaxial Wafers: The Foundation For Advanced Electronic Devices

Gan Epitaxial Wafers are single-crystal substrates with a thin layer of crystal material deposited on top. This process allows for the growth of high-quality crystals with a uniform structure and precise control over the thickness of the deposited layer. The epitaxial layer is grown using a process called metal-organic chemical vapor deposition (MOCVD). During MOCVD, a mixture of metal-organic precursors and ammonia are heated in a reactor, causing a chemical reaction that results in the deposition of GaN onto the substrate.


Gan Epitaxial Wafers are used to produce a wide range of GaN devices, including high electron mobility transistors (HEMTs), light-emitting diodes (LEDs), laser diodes, and power devices. HEMTs are used in high-frequency applications, such as wireless communications and radar systems. LEDs and laser diodes are used in solid-state lighting and display applications. Power devices based on GaN are used in power electronics, such as converters and inverters for solar panels and electric vehicles.


The shortcoming pattern picture utilizing X-ray topography is very disclosing in these samples, screening threading dislocations, facet development and smidgens of DB formation. Furthermore, a particular kind of macroscopic deficiencies is seen, mostly tiling seams with high-compactness, linearly bunched disruption sets.

This kind of TD that is seen in several investigated wafers comprises of very thick, linearly bunched dislocation groups that are allied over the whole crystals and create a type of sub-grain boundary. They look as threading disarticulations, which recompense for the stress. X-ray topography was utilized to study the history advancement of a group of Gan Epitaxial Wafers developed by the ammonothermal process. The Borrmann impact was used to detect the imperfection patterns that take place in the substrates from their topography. The subsequent defect picture of a native seed crystal and two development steps were compared.


Read More @ http://cmiblogpost.weebly.com/article/gan-epitaxial-wafers-used-in-radiofrequency-and-power-devices5609185

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