Operable SiC devices have been successfully fabricated in α-SiC in concentrated efforts to develop this material as a semiconductor (Campbell and Chang 1978).
However, the devices were produced in Lely crystals, the character of which was not reproducible from run to run, as indicated above.
https://www.hslabrasive.com/products/silicon-carbide/The reader is referred to the website by the SiC power-device research group at Purdue University where one can obtain both continually updated information regarding SiC devices and links to other sources of information regarding SiC-based devices.The fundamental reasons for the interest in SiC as a potential material for devices, specifically high-temperature and high-power devices, stem from its superior thermal conductivity and thermal stability relative to other semiconductor materials and from the fact that the specific on-resistance of a SiC power device is expected to be 100–200 times lower than a similarly rated silicon device (Baliga 1989).
The chemistry, microstructure, and electrical properties of cobalt, titanium, and platinum Schottky contacts on 6H-SiC have been reported (Porter et al.
Devices using these types of contacts and known as Schottky diodes are expected to find use as flyback rectifiers in power systems driving inductive loads.
The measured blocking voltage of the nickel diode was 1720 V with a specific on-resistance of 5.6 mΩcm2.