A new market study, titled “Global RF GaN Market Size, Status and Forecast 2022” has been featured on Market Research Future. According to researchers, demand for the global market will expand to a noticeable CAGR of 21% over the forecast period. These market research studies intend to predict market size and future growth potential across sectors such as suppliers, industries and regions. Market study presents a deep insight into the industry parameters by accessing the market growth, consumption volume, the upcoming market trends, and the different prices variation for the forecast year. The report also scrutinizes the impact of the COVID-19 pandemic on the global boiler system market.
The RF GaN Market has encountered noteworthy growth over the recent years and is anticipated to grow tremendously over the assessment period. The increased demand for IT & telecommunication equipment and adoption of energy & power applications are expected to drive the market during forecast period. Developments in RF power amplifiers are expected to create an opportunity for RF GaN market. However, competition from silicon carbide (SiC) devices is expected to restrain the market during forecast period.
Top Companies profiled in RF GaN Market Research Report includes: The key players of global RF GaN market are NXP Semiconductors N.V. (Netherlands), Analog Devices Inc. (US), STMicroelectronics N.V. (Switzerland), Toshiba Corporation (Japan), ROHM Semiconductors (Japan), Cree Inc (US), Aethercomm Inc. (US), Microchip Corporation (US), Raytheon Company (US), and Qorvo Inc. (US) among others.
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Global RF GaN Market - Segments
By Material type,
- GaN-on-SiC
- GaN-on-Silicon
- GaN-on-Diamond.
By application,
- IT and telecommunication
- aerospace,
- military and defense
Regional Analysis:
The geographic analysis of the RF GaN market has been conducted for North America, Europe, Asia-Pacific (APAC), and the rest of the world (RoW). North America is responsible for the highest contribution to the demand for RF GaN globally due to high demand from defense sector. Europe was the second largest market in 2017. The region is expected to witness significant support and initiatives from various governments to promote the manufacturing of RF GaN. Europe holds a significant market share in the RF GaN market; the UK holds a strong position in the key market segments. China, Japan, and India are the key contributors in the region. The launch of 5G networks across different countries in the region is expected to drive the demand for RF GaN devices.
Reasons for Buying this Report:
- This report provides pin-point analysis for changing competitive dynamics
- RF GaN Market report provides a forward-looking perspective on different factors driving or restraining Market growth
- It provides a technological growth map over time to understand the industry growth rate
- It provides a seven-year forecast assessed on the basis of how the Market is predicted to grow
- It helps in understanding the key product segments and their future
- RF GaN Market report provides pin point analysis of changing competition dynamics and keeps you ahead of competitors
- It helps in making informed business decisions by having complete insights of market and by making in-depth analysis of market segments
- It provides distinctive graphics and exemplified SWOT analysis of major market segments
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RF GaN Semiconductor Device MarketMarket Research Future (MRFR), asserts in its recently published research report, that the Global RF GaN (Gallium Nitride) arket is projected to grow at 21.6% CAGR, witnessing considerable growth over the review period.
The market was assessed at USD 415.3 million in 2017 and is touted to reach USD 1295.5 million by 2023.Drivers and RestraintsThe past decade has exhibited significant growth in the RF GaN market, which has reshaped the RF power devices landscape.
moreover, innovation in linearization and power efficiency of RF power amplifiers will create opportunities for major market players during the forecast period.
Based on the application, the RF GaN market has been segmented into aerospace, IT and telecommunication, and military and defense.GaN Success or AdvantagesIt takes a suitably matched and configured driver to make sure that the switching device—GaN operates to its full qualifications and does not have unplanned issues.
More commonly, the role of this driver in the device is to be the electrical line among the lower-voltage digital output of the microprocessor-based controller or the same circuitry and the higher-voltage with high current, slew-rate demands of the power-switching device.With this, there is much more to the role of RF GaN device than this.
The need for the current high enough rate to swiftly charge the input capacitance of the device and to turn it on, yet it must quickly and crisply pull that charge from the gate input without ringing or overshoot.At most, the factors define the top-tier concerns of GaN devices and its advantages—The maximum gate voltage allowable is the gate threshold voltage and the body diode voltage drop.
RF GaN Semiconductor Device MarketThe sudden challenges created by the ongoing COVID-19 are captured effectively to exhibit the long term growth projections in the MRFR report on RF GaN Semiconductor Device Market.
The growth sectors of the RF GaN Semiconductor Device Market are identified with precision for a better growth perspective.According to Market Research Future, the global RF GaN semiconductor device market has been segmented based on material, application, end user, and region.The demand for RF amplifiers with a high rate of data transmission, higher frequency, and power has led to the development of GaN RF device technology.
Factors contributing to the growth of the global RF GaN market are increasing adoption of RF GaN power devices for energy & power applications and rise in demand for IT & telecommunication equipment that use RF GaN power devicesIn March 2018, Cree, Inc. announced the acquisition of Infineon Technologies’ AG radio frequency (rf) power business for approximately € 345 million.
The transaction would expand the Cree Wolfspeed business unit’s wireless market and also strengthen Wolfspeed’s leadership in RF GaN-on-SiC technology, as well as provides access to additional markets, customers, and packaging expertise.The global RF GaN semiconductor device market has been segmented based on sensor type, application, and region.Based on material type, the market has been segmented into GaN-On-SiC, GaN-On-Silicon, and GaN-On-Diamond.
The GaN-on-SiC segment holds the largest market share; it is expected to register the highest CAGR during the forecast period due to various benefits offered by it including high thermal conductivity, performance, reliability, and cut-off frequency which increases its adoption across different industry verticals.Based on applications the market has been segmented into wireless infrastructure, power storage, satellite communication, PV inverter, others.
The wireless segment led the market in 2018 due to the increasing requirement of devices with low power consumption and increasing overall efficiency in performance.Based on end user, the market has been segmented into aerospace & defense, IT & telecom, consumer electronics, automotive, and others.
