Rapidly Growing CAGR to be achieved by GaN Power Device Market By 2026

Increasing production of hybrid electric vehicles and electric vehicles globally is fueling the demand for power semiconductor devices such as SiC and GaN.

Meanwhile, GaN-on-silicon (GaN-on-Si) devices are also anticipated to witness growth in the coming years.

Also, the advancement in semiconductor and power electronics is helping companies to improve power management and battery capacity.For more incisive insights, Request a Sample: https://www.factmr.com/connectus/sample?flag=S_id=381As per the report by Fact.MR, the global SiC and GaN power semiconductor market is expected to witness robust growth, increasing at a CAGR of 24.7%.

Following are the insights showing how the global SiC & GaN power semiconductor market will perform in the coming years.Asia Pacific Excluding Japan (APEJ) to emerge as the dominating region in the global SiC & GaN power semiconductor market.

By the end of 2026, APEJ is projected to bring in more than US$ 2,200 million revenue.

Increasing demand for mobile devices, the presence of the key companies are some of the factors driving the demand for SiC & GaN to power semiconductor in the region.Report Customization can be done @ https://www.factmr.com/connectus/sample?flag=RC_id=381Meanwhile, Japan followed by Europe are also likely to see the significant growth in the coming years.

According to IMARC Group’s latest report, titled “GaN Power Device Market: Global Industry Trends, Share, Size, Growth, Opportunity and Forecast 2021-2026”, the global GaN power device market exhibited strong growth during 2015-2020.

Looking forward, IMARC Group expects the market to grow at a CAGR of around 19% during 2021-2026.As the novel coronavirus (COVID-19) crisis takes over the world, we are continuously tracking the changes in the markets, as well as the purchase behaviors of the consumers globally–our estimates about the latest market trends and forecast values after considering the impact of this pandemic.

These observations will be integrated into the report.Request for a free sample copy of this report: https://www.imarcgroup.com/gan-power-device-market/requestsampleThe gallium nitride (GaN) power device refers to a wide bandgap semiconductor that is used for high-efficiency power transistors and integrated circuits.

This high electron mobility transistor (HEMT) is produced by combining a thin layer of aluminum gallium nitride (AIGan) and GaN crystal, which induces a two-dimensional electron gas (2DEG).

As compared to silicon-based metal-oxide-semiconductor field-effect transistor (MOSFET), the GaN power device offers higher breakdown strength, faster-switching speed, stronger thermal conductivity, and lower on-resistance.

Apart from this, GaN devices improve efficiency and reduce the costs of power conservation systems.Market Trends and Drivers:The GaN power device market is primarily being driven by the widespread product application in the automotive sector to be utilized in the lighting and braking control systems of electric vehicles (EVs) and hybrid electric vehicles (HEVs).

Decrease in prices of GaN devices, increase in demand for GaN devices for wireless charging, and rise in adoption of GaN devices in electric vehicle have boosted the growth of the global GaN power device market.

In addition, increase in requirement of GaN devices for commercial RF applications augments the growth of the market.

On the other hand, lack of availability of GaN material hampers the market growth to some extent.

Moreover, government initiatives in HVDC and smart grid are expected to create an array of opportunities in the industry.The global GaN Power device market was estimated at $110.3 million in 2019 and is expected to hit $1.24 billion by 2027, registering a CAGR of 35.4% from 2020 to 2027.

The report provides a detailed analysis of the top investment pockets, top winning strategies, drivers & opportunities, market size & estimations, competitive landscape, and changing market trends.COVID 19 scenarios:The increase in storage demand from data centers due to remote working boosted the growth of the market.In addition, the supporting sectors including healthcare and medical devices, and telecommunications fuel the market growth amid COVID 19.

Based on product, the GaN power modules segment contributed to nearly half of the total market revenue in 2019, and is anticipated to rule the roost by the end of 2027.

RF GaN Semiconductor Device MarketMarket Research Future (MRFR), asserts in its recently published research report, that the Global RF GaN (Gallium Nitride) arket is projected to grow at 21.6% CAGR, witnessing considerable growth over the review period.

The market was assessed at USD 415.3 million in 2017 and is touted to reach USD 1295.5 million by 2023.Drivers and RestraintsThe past decade has exhibited significant growth in the RF GaN market, which has reshaped the RF power devices landscape.

moreover, innovation in linearization and power efficiency of RF power amplifiers will create opportunities for major market players during the forecast period.

Based on the application, the RF GaN market has been segmented into aerospace, IT and telecommunication, and military and defense.GaN Success or AdvantagesIt takes a suitably matched and configured driver to make sure that the switching device—GaN operates to its full qualifications and does not have unplanned issues.

More commonly, the role of this driver in the device is to be the electrical line among the lower-voltage digital output of the microprocessor-based controller or the same circuitry and the higher-voltage with high current, slew-rate demands of the power-switching device.With this, there is much more to the role of RF GaN device than this.

The need for the current high enough rate to swiftly charge the input capacitance of the device and to turn it on, yet it must quickly and crisply pull that charge from the gate input without ringing or overshoot.At most, the factors define the top-tier concerns of GaN devices and its advantages—The maximum gate voltage allowable is the gate threshold voltage and the body diode voltage drop.

"In this era of ITization and automation, the need of advance consumer electronics is increasing day by day, and so the requirement of highly efficient, light weight and compact size are increasing for many Electronic and electrical devices.

Moreover, GaN devices are much smaller for the same functional performance.Global GaN Power Device Market is growing at a CAGR of 40% during the forecast period.

GaN transistors are more efficient substitute of silicon-based transistors, due to their ability of fabricating more compact devices for a same resistance value and breakdown voltage as compared to silicon devices.

Huge revenue generation from the consumer electronics and automobiles, RF-power electronics, RF power devices used in military, defense, and aerospace industries are the major factors driving the growth of the GaN power device market.Get More Information About-GaN Power Devices Market@ https://www.trendsmarketresearch.com/report/sample/3291The largest market share is held by RF power devices.

The need for high power in the very high frequency, ultrahigh frequency, and microwave bands has led to the demand for these devices, which have the capabilities to supply tens to hundreds of watts at RF frequencies up to 10 GHz and beyond.

GaN RF power has emerged as the technology of to be used in all radar, satellite, communications, and electronic warfare.The Asia-Pacific GaN Power Device market is expected to grow the most, due to the presence of many emerging nations, such as China, Japan, Taiwan, the Philippines, and India.

COVID-19 Impact Analysis on GaN & SiC Power Semiconductor Market report published by Value Market Research provides a detailed market analysis comprising market size, share, value, growth and trends for the period 2019-2027.

The report encompasses data regarding market share and recent developments by key players.

Moreover, this market report also covers regional and country markets in detail.The research report also covers the comprehensive profiles of the key players in the market and an in-depth view of the competitive landscape worldwide.

The major players in the GaN & SiC Power Semiconductor include  Alpha and Omega Semiconductors, Diodes Incorporated, Fuji Electric Co., Ltd, Infineon Technologies AG, Microsemi Corporation, Mitsubishi Electric Corporation, Panasonic Corporation, Exagan S.A.S, Vincotech GmbH, STMicroelectronics N.V., NXP Semiconductors N.V., Cambridge Electronics, GaN Systems Inc., Avogy, Inc., and United Silicon Carbide Inc..

This section includes a holistic view of the competitive landscape that includes various strategic developments such as key mergers & acquisitions, future capacities, partnerships, financial overviews, collaborations, new product developments, new product launches, and other developments.Get more information on "Global GaN & SiC Power Semiconductor Research Report" by requesting FREE Sample Copy at https://www.valuemarketresearch.com/contact/gan-sic-power-semiconductor-market/download-sampleMarket SegmentationThe broad GaN & SiC Power Semiconductor has been sub-grouped into the Product, Application and Region.

The report studies these subsets with respect to the geographical segmentation.

RF GaN Semiconductor Device MarketThe sudden challenges created by the ongoing COVID-19 are captured effectively to exhibit the long term growth projections in the MRFR report on RF GaN Semiconductor Device Market.

The growth sectors of the RF GaN Semiconductor Device Market are identified with precision for a better growth perspective.According to Market Research Future, the global RF GaN semiconductor device market has been segmented based on material, application, end user, and region.The demand for RF amplifiers with a high rate of data transmission, higher frequency, and power has led to the development of GaN RF device technology.

Factors contributing to the growth of the global RF GaN market are increasing adoption of RF GaN power devices for energy & power applications and rise in demand for IT & telecommunication equipment that use RF GaN power devicesIn March 2018, Cree, Inc. announced the acquisition of Infineon Technologies’ AG radio frequency (rf) power business for approximately € 345 million.

The transaction would expand the Cree Wolfspeed business unit’s wireless market and also strengthen Wolfspeed’s leadership in RF GaN-on-SiC technology, as well as provides access to additional markets, customers, and packaging expertise.The global RF GaN semiconductor device market has been segmented based on sensor type, application, and region.Based on material type, the market has been segmented into GaN-On-SiC, GaN-On-Silicon, and GaN-On-Diamond.

The GaN-on-SiC segment holds the largest market share; it is expected to register the highest CAGR during the forecast period due to various benefits offered by it including high thermal conductivity, performance, reliability, and cut-off frequency which increases its adoption across different industry verticals.Based on applications the market has been segmented into wireless infrastructure, power storage, satellite communication, PV inverter, others.

The wireless segment led the market in 2018 due to the increasing requirement of devices with low power consumption and increasing overall efficiency in performance.Based on end user, the market has been segmented into aerospace & defense, IT & telecom, consumer electronics, automotive, and others.